BD433
器件描述:COMPLEMENTARY SILICON POWER TRANSISTORS
文件大小:70.41KB,共4页
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器件资料摘要:
BD433/5/7
BD434/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
a73 SGS-THOMSON PREFERRED SALESTYPES
a73 COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output stages.
The complementary PNP types are BD434,
BD436, and BD438 respectively.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD433 BD435 BD437
PNP BD434 BD436 BD438
VCBO Collector-Base Voltage (IE = 0) 22 32 45 V
V
CES
Collector-Emitter Voltage (V
BE
= 0) 22 32 45 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 22 32 45 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 4 A
ICM Collector Peak Current (t ≤ 10 ms) 7 A
IB Base Current 1 A
P
tot
Total Dissipation at T
c
≤ 25
o
C36W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
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