©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD439/
441
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BD439
: BD441
60
80
V
V
V
CES
Collector-Emitter Voltage
: BD439
: BD441
60
80
V
V

V
CEO
Collector-Emitter Voltage
: BD439
: BD441
60
80
V
V

V
EBO
Emitter-Base Voltage 5 V

I
C
Collector Current (DC) 4 A

I
CP
*Collector Current (Pulse) 7 A

I
B
Base Current 1 A
P
C
Collector Dissipation (T
C
=25°C) 36 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD439
: BD441
I
C
= 100mA, I
B
= 0 60
80
V
V
I
CBO
Collector Cut-off Current : BD439
: BD441
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
100
100
µA
µA
I
CES
Collector Cut-off Current : BD439
: BD441
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
100
100
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 mA
h
FE
* DC Current Gain : BD439
: BD441
: BD439
: BD441
: BD439
: BD441
V
CE
= 5V, I
C
= 10mA
V
CE
=1V, I
C
= 500mA
V
CE
= 1V, I
C
= 2A

20
15
40
40
25
15
130
130
140
140
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 2A, I
B
= 0.2A 0.8 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= 5V, I
C
= 10mA
V
CE
= 1V, I
C
= 2A
0.58
1.5
V
V
f
T
Current Gain Bandwidth Product V
CE
= 1V, I
C
= 250mA 3 MHz
BD439/441
Medium Power Linear and Switching
Applications
• Complement to BD440, BD442 respectively
1
TO-126
1. Emitter 2.Collector 3.Base