2SD2657K
Transistors
1/2
Low frequency amplifier
2SD2657K


!Application
Low frequency amplifier
Driver


!Features
1) A collector current is large.
2) VCE(sat) ≤ 350mV
At IC = 1A / IB = 50mA





!External dimensions (Units : mm)
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : FZ
0.8
0.15
0~0.1
0.3Min.
1.1
(
2
)
(
1
)
2.8
1.6
0.4 (
3
)
2.91.9
0.95
0.95
Each lead has same dimensions



!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
30
30
6
1.5
200
150
−55~+150
3
∗
Unit
V
V
V
A
A
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Single pulse, PW=1ms


!Packaging specifications
2SD2657K
T146
3000Type
Package
Code
Basic ordering unit (pieces)
Taping







!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=10V, IE=0A, f=1MHz
fT − 330 − MHz VCE=2V, IE=−100mA, f=100MHz
BVCBO 30 −−V IC=10µA
BVCEO 30 −−V IC=1mA
BVEBO 6 −−V IE=10µA
ICBO −−100 nA VCB=30V
IEBO −−100 nA VEB=6V
VCE(sat) − 160 350 mV IC=1A, IB=50mA
hFE 270 − 680 − VCE=2V, IC=100mA
Cob − 11 − pF
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed