©2000 Fairchild Semiconductor International Rev. A, February 2000
BD375/
377/
379
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BD375
: BD377
: BD379
50
75
100
V
V
V
V
CEO
Collector-Emitter Voltage : BD375
: BD377
: BD379
45
60
80
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 2 A

I
CP
*Collector Current (Pulse) 3 A

I
B
Base Current 1 A
P
C
Collector Dissipation (T
C
=25°C) 25 W

T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD375
: BD377
: BD379

I
C
= 100mA, I
B
= 0 45
60
80
V
V
V

BV
CBO
Collector-Base : BD375
Breakdown Voltage : BD377
: BD379
I
C
= 100µA, I
E
= 0 50
75
100
V
V
V

I
CBO
Collector Cut-off Current : BD375
: BD377
: BD379
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
2
2
2
µA
µA
µA

I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 100 µA
h
FE1
h
FE2
* DC Current Gain V
CE
= 2V, I
C
= 0.15A
V
CE
= 2V, I
C
= 1A
40
20
375
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 1A, I
B
= 0.1A 1 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= 2V, I
C
= 1A 1.5 V
t
ON
Turn ON Time V
CC
= 30V, I
C
= 0.5A
I
B1
= - I
B2
= 0.05A
R
L
= 60Ω
50 ns
t
OFF
Turn OFF Time 500 ns
Classification 6 10 16 25
h
FE1
40 ~ 100 63 ~ 160 100 ~ 250 150 ~ 375
BD375/377/379
Medium Power Linear and Switching
Applications
Complement to BD376, BD378 and BD380 respectively
1
TO-126
1. Emitter 2.Collector 3.Base