2SD2657
Transistors
Rev.A 1/2
Low frequency amplifier
2SD2657


zApplication
Low frequency amplifier
Driver


zFeatures
1) A collector current is large.
2) VCE(sat) ≦ 350mV
At IC = 1A / IB = 50mA





zExternal dimensions (Units : mm)
ROHM : TSMT3
(1) Emitter
(2) Base
(3) Collector
1.62.8
0.4
0.16
0~0.1
0.3~0.6.
(3)
0.95
(2)
2.9
1.9
(1)
0.95
1.0MAX
0.7
Abbreviated symbol : FZ
Each lead has
same dimensions



zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
30
30
6
1.5
500
150
−55 to +150
3
∗1
∗2
Unit
V
V
V
A
A
mW
1W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25×25× 0.8mm Ceramic substrate
t

zPackaging specifications
2SD2657
TL
3000Type
Package
Code
Basic ordering unit (pieces)
Taping







zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=10V, IE=0A, f=1MHz
fT − 300 − MHz VCE=2V, IE=−100mA, f=100MHz
BVCBO 30 −−V IC=10µA
BVCEO 30 −−V IC=1mA
BVEBO 6 −−V IE=10µA
ICBO −−100 nA VCB=30V
IEBO −−100 nA VEB=6V
VCE(sat) − 140 350 mV IC=1A, IB=50mA
hFE 270 − 680 − VCE=2V, IC=100mA
Cob − 11 − pF
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed