BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 Designed for Complementary Use with the
BD249 Series
a71 125 W at 25°C Case Temperature
a71 25 A Continuous Collector Current
a71 40 A Peak Collector Current
a71 Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (RBE = 100 Ω)
BD250
BD250A
BD250B
BD250C
VCER
-55
-70
-90
-115
V
Collector-emitter voltage (IC = -30 mA)
BD250
BD250A
BD250B
BD250C
VCEO
-45
-60
-80
-100
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC -25 A
Peak collector current (see Note 1) ICM -40 A
Continuous base current IB -5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3 W
Unclamped inductive load energy (see Note 4) ½LIC2 90 mJ
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 250 °C