©2000 Fairchild Semiconductor International Rev. A, February 2000
BD244/
A/B/
C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW =300µs, duty Cycle =2% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BD244
: BD244A
: BD244B
: BD244C
- 45
- 60
- 80
- 100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BD244
: BD244A
: BD244B
: BD244C
- 45
- 60
- 80
- 100
V
V
V
V

V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 6 A
I
CP
*Collector Current (Pulse) - 10 A
I
B
Base Current - 2 A
P
C
Collector Dissipation (T
C
=25°C) 65 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD244
: BD244A
: BD244B
: BD244C
I
C
= - 30mA, I
B
= 0

- 45
- 60
- 80
- 100
V
V
V
V
I
CEO
Collector Cut-off Current : BD244/244A
: BD244B/244C
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 0.7
- 0.7
mA
mA
I
CES
Collector Cut-off Current : BD244
: BD244A
: BD244B
: BD244C
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
- 0.4
- 0.4
- 0.4
- 0.4
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 1 mA
h
FE
* DC Current Gain V
CE
= - 4V, I
C
= - 0.3A
V
CE
= - 4V, I
C
= - 3A
30
15
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 6A, I
B
= - 1A - 1.5 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= - 4V, I
C
= - 6A - 2 V
BD244/A/B/C
Medium Power Linear and Switching
Applications
Complement to BD243, BD243A, BD243B and BD243C respectively
1.Base 2.Collector 3.Emitter
1
TO-220