BD243B
器件描述：COMPLEMENTARY SILICON POWER TRANSISTORS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：34.04KB，共4页
Sponsor by e络盟器件资料摘要：
BD243B/BD243C
BD244B/BD244C
COMPLEMENTARY SILICON POWER TRANSISTORS
n STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD243B and BD243C are silicon
Epitaxial-Base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD244B and
BD244C respectively.
INTERNAL SCHEMATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD243B BD243C
PNP BD244B BD244C
V
CBO
Collector-Base Voltage (I
E
=0) 80 100 V
V
CEO
Collector-Emitter Voltage (I
B
=0) 80 100 V
VEBO Emitter-Base Voltage (IC =0) 5 V
I
C
Collector Current 6 A
I
CM
Collector Peak Current 10 A
IB Base Current 2 A
Ptot Total Dissipation at T
c
≤ 25
o
C 65 W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
1/4
BD244B/BD244C
COMPLEMENTARY SILICON POWER TRANSISTORS
n STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD243B and BD243C are silicon
Epitaxial-Base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD244B and
BD244C respectively.
INTERNAL SCHEMATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD243B BD243C
PNP BD244B BD244C
V
CBO
Collector-Base Voltage (I
E
=0) 80 100 V
V
CEO
Collector-Emitter Voltage (I
B
=0) 80 100 V
VEBO Emitter-Base Voltage (IC =0) 5 V
I
C
Collector Current 6 A
I
CM
Collector Peak Current 10 A
IB Base Current 2 A
Ptot Total Dissipation at T
c
≤ 25
o
C 65 W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
1/4