©2000 Fairchild Semiconductor International Rev. A, February 2000
BD243/
A/B/
C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test :PW=300µs, duty Cycle<20% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BD243
: BD243A
: BD243B
: BD243C
45
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BD243
: BD243A
: BD243B
: BD243C
45
60
80
100
V
V
V
V

V
EBO
Emitter-Base Voltage 5 V

I
C
Collector Current (DC) 6 A

I
CP
*Collector Current (Pulse) 10 A

I
B
Base Current 2 A
P
C
Collector Dissipation (T
C
=25°C) 65 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD243
: BD243A
: BD243B
: BD243C
I
C
=30mA, I
B
=0

45
60
80
100
V
V
V
V
I
CEO
Collector Cut-off Current : BD243/243A
: BD243B/243C
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
0.7
0.7
mA
mA
I
CES
Collector Cut-off Current : BD243
: BD243A
: BD243B
: BD243C
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
0.4
0.4
0.4
0.4
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 mA
h
FE
*DC Current Gain V
CE
= 4V, I
C
= 0.3A
V
CE
= 4V, I
C
= 3A
30
15
V
CE
(sat) *Collector-Emitter Saturation Voltage I
C
= 6A, I
B
= 1A 1.5 V
V
BE
(on) *Base-Emitter ON Voltage V
CE
= 4V, I
C
= 6A 2 V
BD243/A/B/C
Medium Power Linear and Switching
Applications
Complement to BD244, BD244A, BD244B and BD244C respectively
1.Base 2.Collector 3.Emitter
1
TO-220