BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
SEPTEMBER 1981 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, U K
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
a71 40 W at 25°C Case Temperature
a71 3 A Continuous Collector Current
a71 5 A Peak Collector Current
a71 Customer-Specified Selections Available B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (RBE = 100 Ω)
BD241D
BD241E
BD241F
VCER
160
180
200
V
Collector-emitter voltage (IB = 0)
BD241D
BD241E
BD241F
VCEO
120
140
160
V
Emitter-base voltage VEBO 5 V
Continuous collector current IC 3 A
Peak collector current (see Note 1) ICM 5 A
Continuous base current IB 1 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 40 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W
Unclamped inductive load energy (see Note 4) ½LIC2 32 mJ
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 250 °C