BD241BFP
BD242BFP
COMPLEMENTARY SILICON POWER TRANSISTORS
n SGS-THOMSON PREFERRED SALESTYPES
n COMPLEMENTARY PNP - NPN DEVICES
n FULLY MOLDED ISOLATED PACKAGE
n 2000 V DC ISOLATION (U.L. COMPLIANT)
APPLICATIONS
n GENERAL PURPOSE SWITCHING
n GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The BD241BFP is silicon epitaxial-base NPN
transistors mounted in TO-220FP fully molded
isolated package.
It is inteded for power linear and switching
applications.
The complementary PNP types is the BD242BFP.
INTERNAL SCHEMATIC DIAGRAM
April 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD241BFP
PNP BD242BFP
VCER Collector-Base Voltage (RBE =100Ω)90V
CEO
Collector-Emitter Voltage (I
B
=0) 80 V
V
EBO
Emitter-Base Voltage (I
C
=0) 5 V
IC Collector Current 3 A
I
CM
Collector Peak Current 5 A
IB Base Current 1 A
Ptot Total Dissipation at Tc ≤ 25
o
C24W
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220FP
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