2SD2638
2001-11-27 1
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SD2638

Horizontal Deflection Output for Color TV, Digital TV.
High Speed Switching Applications.


Gb7G20 High voltage: V
CBO
= 1700 V
Gb7G20 Low saturation voltage: V
CE (sat)
= 5 V (max)
Gb7G20 High speed: t
f
= 0.8 µs (max)

Maximum Ratings (Tc G3d 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
1700 V
Collector-emitter voltage V
CEO
750 V
Emitter-base voltage V
EBO
5 V
DC I
C
7
Collector current
Pulse I
CP
14
A
Base current I
B
3.5 A
Collector power dissipation P
C
50 W
Junction temperature T
j
150 °C
Storage temperature range T
stg
G2d55~150 °C

Equivalent Circuit





Electrical Characteristics (Tc G3d 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
G3d 1700 V, I
E
G3d 0 Gbe Gbe 1 mA
Emitter cut-off current I
EBO
V
EB
G3d 5 V, I
C
G3d 0 66 Gbe 200 mA
Emitter-base breakdown voltage V
(BR) EBO
I
E
G3d 400 mA, I
C
G3d 0 5 Gbe Gbe V
h
FE
(1)

V
CE
G3d 5 V, I
C
G3d 1 A 8 Gbe 25
DC current gain
h
FE
(2)

V
CE
G3d 5 V, I
C
G3d 5.5 A 4.5 Gbe 7.5

Collector-emitter saturation voltage V
CE (sat)
I
C
G3d 5.5 A, I
B
G3d 1.2 A Gbe Gbe 5 V
Base-emitter saturation voltage V
BE (sat)
I
C
G3d 5.5 A, I
B
G3d 1.2 A Gbe 1.0 1.5 V
Forward voltage (damper diode) V
F
I
F
G3d 7 A GbeG20 1.3 2 V
Transition frequency f
T
V
CE
G3d 10 V, I
C
G3d 0.1 A GbeG20 2 Gbe MHz
Collector output capacitance C
ob
V
CB
G3d 10 V, I
E
G3d 0, f G3d 1 MHz GbeG20 125 GbeG20 pF
Storage time t
stg
Gbe 7 9
Switching time
Fall time t
f

I
CP
G3d 5.5 A, I
B1 (end)
G3d 1.1 A,
f
H
G3d 15.75 kHz
Gbe 0.4 0.8
G6ds


Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-16E3A
Weight: 5.5 g (typ.)
1. Base
50 G57 (typ.)
3. Emitter
2. Collector