©2000 Fairchild Semiconductor International Rev. A, February 2000
BD241/
A/B/
C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW=350µs, duty Cycle≤2% Pulsed
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage
: BD241
: BD241A
: BD241B
: BD241C
45
60
80
100
V
V
V
V
V
CER
Collector-Emitter Voltage
: BD241
: BD241A
: BD241B
: BD241C
55
70
90
115
V
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 3 A

I
CP
*Collector Current (Pulse) 5 A

I
B
Base Current 1 A
P
C
Collector Dissipation (T
C
=25°C) 40 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD241
: BD241A
: BD241B
: BD241C
I
C
= - 30mA, I
B
= 0

45
60
80
100
V
V
V
V
I
CEO
Collector Cut-off Current : BD241/A
: BD241B/C
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
0.3
0.3
mA
mA

I
CES
Collector Cut-off Current : BD241
: BD241A
: BD241B
: BD241C
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
0.2
0.2
0.2
0.2
mA
mA
mA
mA

I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 mA

h
FE
* DC Current Gain V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
25
10

V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 0.6A 1.2 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= 4V, I
C
= 3A 1.8 V
BD241/A/B/C
Medium Power Linear and Switching
Applications
Complement to BD242/A/B/C respectively
1.Base 2.Collector 3.Emitter
1
TO-220