BD239C
器件描述：NPN SILICON POWER TRANSISTOR
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：32.32KB，共4页
Sponsor by e络盟器件资料摘要：
BD239C
NPN SILICON POWER TRANSISTOR
n STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The BD239C is a silicon epitaxial-base NPN
transistor in Jedec TO-220 plastic package.
It is inteded for use in medium power linear and
switching applications.
INTERNAL SCHEMATIC DIAGRAM
April 1999
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CER Collector-Emitter Voltage (RBE =100Ω)
115 V
V
CEO
Collector-Emitter Voltage (I
B
=0) 100 V
V
EBO
Emitter-Base Voltage (I
C
=0) 5 V
IC Collector Current 2 A
I
CM
Collector Peak Current 4 A
I
B
Base Current 0.6 A
Ptot Total Dissipation at T
c ≤ 25
o
C 30 W
Ptot Total Dissipation at T
amb ≤ 25
o
C 2W
Tstg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1/4
NPN SILICON POWER TRANSISTOR
n STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The BD239C is a silicon epitaxial-base NPN
transistor in Jedec TO-220 plastic package.
It is inteded for use in medium power linear and
switching applications.
INTERNAL SCHEMATIC DIAGRAM
April 1999
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CER Collector-Emitter Voltage (RBE =100Ω)
115 V
V
CEO
Collector-Emitter Voltage (I
B
=0) 100 V
V
EBO
Emitter-Base Voltage (I
C
=0) 5 V
IC Collector Current 2 A
I
CM
Collector Peak Current 4 A
I
B
Base Current 0.6 A
Ptot Total Dissipation at T
c ≤ 25
o
C 30 W
Ptot Total Dissipation at T
amb ≤ 25
o
C 2W
Tstg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1/4