2SD1834
Transistors
Rev.A 1/2
Medium Power Transistor (60V, 1A)
2SD1834


zFeatures
1) Darlington connection for high DC current gain
(typically, DC current gain = 15000 at VCE = 3V, IC =
0.5A)
2) High input impedance.


zCircuit diagram
B
C
E
C
B
E
: Base
: Collector
: Emitter


zExternal dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.40.4
1.51.5
(3)(2)(1)
4.5
0.5
4.0
2.5
1.0




zAbsolute maximum ratings (Ta=25
°
C)
Parameter Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
60
60
7
1
0.5
2
150
−55 to +150
Unit
V
V
V
A(DC)
2 A(Pulse) ∗1
∗2
∗3
W
°C
°C
∗1 Single pulse Pw=100ms
∗2 RBE=0Ω
∗3 Mounted on a 40×40×
t
0.7mm ceramic substrate
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature



zElectrical characteristics (Ta=25
°
C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
60
60
7
−
−
−
−
−
−
−
−
−
−
0.9
150
7
−
−
−
1
1
1.5
−
−
V
V
V
µA
µA
V
MHz
pF
IC=50µA
IC=100µA , RBE=0Ω
IE=50µA
VCB=60V
VEB=6V
IC/IB=500mA/500µA
hFE 2000 −− −VCE/IC=3V/500mA
∗
VCE=5V , IE= −10mA , f=100MHz
VCE=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
DC current transfer ratio
∗
Measured using pulse current.