BD235
器件描述:COMPLEMENTARY SILICON POWER TRANSISTORS
文件大小:75.78KB,共5页
Sponsor by e络盟
器件资料摘要:
BD235/BD236
BD237/BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
n SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively.
INTERNAL SCHEMATIC DIAGRAM
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD235 BD237
PNP BD236 BD238
V
CBO
Collector-Base Voltage (I
E
=0) 60 100 V
VCER Collector-Base Voltage (RBE =1KΩ)6
CEO
Collector-Emitter Voltage (I
B
=0) 60 80 V
VEBO Emitter-Base Voltage (IC =0) 5 V
I
C
Collector Current 2 A
I
CM
Collector Peak Current 6 A
Ptot Total Dissipation at Tc =25
o
C2W
stg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
1/5