BD234
器件描述：SILICON PNP TRANSISTOR
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：62.86KB，共4页
Sponsor by e络盟器件资料摘要：
BD234
SILICON PNP TRANSISTOR
a73 SGS-THOMSON PREFERRED SALESTYPE
a73 PNP TRANSISTOR
DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power
transistor in Jedec SOT-32 plastic package
inteded for use in medium power linear and
switching applications.
INTERNAL SCHEMATIC DIAGRAM
May 1997
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) -45 V
V
CER
Collector-Emitter Voltage (R
BE
= 1KΩ)-
CEO
Collector-Emitter Voltage (I
B
= 0) -45 V
V
EBO
Emitter-Base Voltage (I
C
= 0) -5 V
IC Collector Current -2 A
I
CM
Collector Peak Current -6 A
Ptot Total Dissipation at Tc ≤ 25
o
C2W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1/4
SILICON PNP TRANSISTOR
a73 SGS-THOMSON PREFERRED SALESTYPE
a73 PNP TRANSISTOR
DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power
transistor in Jedec SOT-32 plastic package
inteded for use in medium power linear and
switching applications.
INTERNAL SCHEMATIC DIAGRAM
May 1997
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) -45 V
V
CER
Collector-Emitter Voltage (R
BE
= 1KΩ)-
CEO
Collector-Emitter Voltage (I
B
= 0) -45 V
V
EBO
Emitter-Base Voltage (I
C
= 0) -5 V
IC Collector Current -2 A
I
CM
Collector Peak Current -6 A
Ptot Total Dissipation at Tc ≤ 25
o
C2W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1/4