2SD1468S
Transistors
Rev.A 1/3
Muting Transistor (15V, 1A)
2SD1468S


zFeatures
1) Low saturation voltage, typically VCE(sat) = 0.08V at
Ic / IB = 500mA / 500µA.
2) Ideal for low voltage, high current drives.
3) High DC current gain and high current.








zExternal dimensions (Unit : mm)
Taping specifications
SPT
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.450.5
4.0 2.0
(1)Emitter
(2)Collector
(3)Base


zAbsolute maximum ratings (Ta=25
°
C)
Parameter Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
30
15
5
1
0.3
150
−55 to +150
Unit
V
V
V
A
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature



zElectrical characteristics (Ta=25
°
C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
30
15
5
−
−
−
50
−
−
−
−
−
−
0.08
150
15
−
−
−
0.5
0.5
0.4
−
30
V
V
V
µA
µA
V
MHz
pF
IC=50µA
IC=1mA
IE=50µA
VCB=20V
VEB=4V
IC/IB=0.5mA/50mA
hFE 120 − 560 − VCE/IC=3V/0.1A
VCE=5V , IE= −50mA , f=100MHz
VCE=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
DC current transfer ratio



zPackaging specifications and hFE
Type 2SD1468S
SPT
QRS
5000
Package
hFE
TPCode
Basic ordering unit (pieces)