©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD233/
235/
237
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BD233
: BD235
: BD237
45
60
100
V
V
V
V
CEO
Collector-Emitter Voltage : BD233
: BD235
: BD237
45
60
80
V
V
V

V
CER
Collector-Emitter Voltage : BD233
: BD235
: BD237
45
60
100
V
V
V

V
EBO
Emitter-Base Voltage 5 V

I
C
Collector Current (DC) 2 A

I
CP
*Collector Current (Pulse) 6 A
P
C
Collector Dissipation (T
C
=25°C) 25 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD233
: BD235
: BD237

I
C
= 100mA, I
B
= 0 45
60
80
V
V
V
I
CBO
Collector Cut-off Current
: BD233
: BD235
: BD237

V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 100V, I
E
= 0
100
100
100
µA
µA
µA

I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 mA

h
FE
* DC Current Gain V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 1A
40
25

V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 1A, I
B
= 0.1A 0.6 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= 2V, I
C
= 1A 1.3 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 250mA 3 MHz
BD233/235/237
Medium Power Linear and Switching
Applications
• Complement to BD 234/236/238 respectively
1
TO-126
1. Emitter 2.Collector 3.Base