2SC5825
Transistors
1/3
Power transistor (60V, 3A)
2SC5825


!Features
1) High speed switching.
(Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 0.2mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2073


!Applications
Low frequency amplifier
High speed switching
!External dimensions (Unit : mm)
Each lead has same dimensions
Abbreviated symbol : C5825
(1) Base
(2) Collector
(3) Emitter
CPT3
(SC-63)

2.30.51.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(2)
(3)
C0.5
0.65
0.9
(1)
0.75
2.3
0.9
1.55.5
5.1
(x1/2)



!Structure
NPN Silicon epitaxial planar transistor


!Packaging specifications
Taping
2SC5825
Type TL
2500
Package
Basic ordering unit (pieces)
Code



!Absolute maximum ratings (Ta=25°C)
Parameter
V
V
V
A
A
W
W
°C
°C
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Continuous
Pulsed
60
60
6
3
6
1.0
10.0
150
−55 to 150
∗1
∗2
∗3
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
∗3 Tc=25°C