BCX71G PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T A =25 °C )
• Refer to KS5086 for graphs
ELECTRICAL CHARACTERISTICS (T A =25 °C )
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
V CBO
V CEO
V EB O
I C
P C
T STG
-45
-45
-5.0
-100
350
150
V
V
V
mA
mW
°C
Characteristic Symbol Test Conditions Min Max Unit
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Noise Figure
Turn On Time
Turn Off Time
BV CEO
BV EBO
I CES
h FE
V CE (sat)
V BE (sat)
V BE (on)
C OB
NF
T ON
T OFF
I C = -2mA, I B =0
I E = -1 µA , I C =0
V CE = -32V, V BE =0
V EB = -5V, I C = -2mA
V CE = -1V, I C = -50 µA
I C = -10mA, I B = -0.25mA
I C = -50mA, I B = -1.25mA
I C = -10mA, I B = -0.25mA
I C = -50mA, I B = -1.25mA
I C = -2mA, V CE = -5V
V CB = -10V, I E =0
f=1MHz
I C =0.2mA, V CE =5V
R S =2 K Ω, f=1KHz
I C = -10mA, I B1 = -1mA
I B2 = -1mA, V BB =3.6V
R L =990 Ω
-45
-5
120
60
-0.6
-0.68
-0.6
-20
220
-0.25
-0.55
-0.85
-1.05
-0.75
6
6
150
800
V
V
nA
V
V
V
V
V
pF
dB
ns
ns
SOT-23
1. Base 2. Emitter 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B