LESHAN RADIO COMPANY, LTD.
M16–1/6
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
45 Vdc
Collector–Base Voltage V
CBO
45 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BCX70GLT1 = AG ; BCX70JLT1 = AJ ; BCX70KLT1 = AK ;
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 2.0mAdc, I
E
= 0 )
V
(BR)CEO
45 — Vdc
Emitter–Base Breakdown Voltage
(I
E
= 1.0 µAdc, I
C
= 0)
V
(BR)EBO
5.0 — Vdc
Collector Cutoff Current I
CES
(V
CE
= 32 Vdc, )
— 20 nAdc
(V
CE
= 32 Vdc, T
A
= 150°C )
—2µAdc
Emitter Cutoff Current
I
EBO
— 20 nAdc
(V
EB
= 4.0 Vdc, I
C
= 0 )
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
3
2
BCX70GLT1
BCX70JLT1
BCX70KLT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE