BCX70G NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T A =25 °C )
• Refer to KS5088 for graphs
ELECTRICAL CHARACTERISTICS (T A =25 °C )
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
V CBO
V CEO
V EBO
I C
P C
T STG
45
45
5
200
350
150
V
V
V
mA
mW
°C
Characteristic Symbol Test Conditions Min Max Unit
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time
BV CEO
BV EBO
I CES
I EBO
h FE
V CE (sat)
V BE (sat)
V BE (on)
f T
C OB
NF
T ON
T OFF
I C =2mA, I B =0
I E =1 µA , I C =0
V CE =32V, V BE =0
V EB =4V, I C =0
V CE =5V, I C =2mA
V CE =1V, I C =50mA
I C =10mA, I B =0.25mA
I C =50mA, I B =1.25mA
I C =10mA, I B =0.25mA
I C =50mA, I B =1.25mA
I C =2mA, V CE =5V
V CE =5V, I C =10mA
V CB =10V, I E =0
f=1MHz
I C =0.2mA, V CE =5V
f=1KHz, R S =2 K Ω
I C =10mA, I B1 =1mA
I B2 =1mA, V BB =3.6V
R L =990 Ω R 1 =R 2 =5 K Ω
45
5
120
60
0.6
0.7
0.55
125
20
20
220
0.35
0.55
0.85
1.05
0.75
4.5
6
150
800
V
V
nA
nA
V
V
V
V
V
MHz
pF
dB
ns
ns
SOT-23
1. Base 2. Emitter 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B