SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2001
COMPLEMENTARY TYPE – BCX5316
PARTMARKING DETAIL – BL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
100 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage
V
(BR)CBO
100 V IC =100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80 V IC =10mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5VI
E
=10µA
Collector Cut-Off Current I
CBO
0.1
20
µA
µA
V
CB
=30V
V
CB
=30V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
20 nA V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 V I
C
=500mA, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0 V I
C
=500mA, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
25
100
25
250
I
C
=5mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=10V,
f=100MHz
Output Capacitance C
obo
15 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions.
BCX5616
C
C
B
E
SOT89
TBA