SOT8
9 NPN S
ILICON P
L
A
N
A
R

M
E
D
IUM
P
OWER
TR
ANSIS
TOR
I
SSUE 2
–
FEBRU
ARY
1995
a37
FEA
TURES
*
H
i
gh gai
n and
low

s
a
t
u
r
ati
on vol
t
a
g
e
s
CO
M
PLEM
ENTA
R
Y
TYPE –
BC
X
6
9
P
ARTM
ARKIN
G
D
ETAI
L
–
B
C
X
6
8
–
CE
BC
X
6
8
-
16
–
C
C
BC
X
6
8
-
25
–
C
D
AB
SOL
UTE
M
AXI
MUM
RATI
NGS.
P
A
R
A
M
E
T
E
R
S
Y
M
B
O
L
V
ALUE
U
N
I
T
Collector-Base
Vo
ltage
V
CB
O
25
V
Collector-Emitter
Voltage
V
CE
O
20
V
Emitter
-
Base Voltage
V
EB
O
5V
P
e
a
k
P
u
l
s
e Cu
r
ren
t
I
CM
2A
Contin
uo
us Co
lle
ctor
Cur
r
e
n
t
I
C
1A
Pow
e
r
D
i
ssipa
tio
n
a
t
T
am
b
=2
5°C
P
to
t
1W
O
p
era
ti
n
g
an
d
Sto
rag
e T
e
m
p
era
tu
r
e
Ran
g
e
T
j
:T
st
g
-
6
5
to +1
5
0
°
C
E
L
ECTR
IC
AL CH
AR
ACTER
ISTI
C
S

(
a
t T
am
b
=
25
°
C

unle
s
s

ot
h
e
rwi
s
e

sta
t
e
d
)
.
PA
RA
MET
ER
SYMBO
L
M
I
N
.
T
YP.
M
A
X
.
U
N
I
T
C
O
N
D
I
T
ION
S.
Collector-Base Br
eakd
o
w
n
vo
l
t
ag
e
V
(BR
)
CB
O
25
V
I
C
=1
00
µ
A
Colle
ctor
-Emitte
r
Br
e
a
k
dow
n Vo
lta
g
e
V
(BR
)
CE
O
20
V
I
C
=1
0m
A
Emitter
-
Base
Br
e
a
k
dow
n Vo
lta
g
e
V
(BR
)
E
B
O
5V
I
E
=10
0
µ
A
Collector Cu
t
-
O
f
f
Cu
rr
en
t
I
CB
O
0.
1
10
µ
A
µ
A
V
CB
=2
5V
V
CB
=
2
5
V
,
T
a
=
150
°C
Emi
tter
Cu
t-O
ff Cu
r
r
e
n
t
I
EB
O
10
µ
A
V
EB
=5V
Colle
ctor
-Emitte
r
Sa
tu
r
a
ti
on
Vol
t
age
V
CE
(sa
t)
0.
5
V
I
C
=1
A
,
I
B
=1
00m
A*
Ba
se
-Emi
t
t
e
r
Tu
r
n
-O
n
Voltage
V
B
E
(
on)
1.
0
V
I
C
=1
A
,
V
CE
=1V
*
Sta
t
i
c
Fo
rward
Cu
r
r
e
n
t
Tra
n
sf
er Ratio
h
FE
BCX
6
8
-16
BCX
6
8
-25
50 85 60 100 160
2
5
0
37
5
25
0
40
0
I
C
=5
mA
, V
CE
=
10V
I
C
=
500m
A
,
V
CE
=1
V
I
C
=1
A
,
V
CE
=1V
*
I
C
=
500m
A
,
V
CE
=1
V
*
I
C
=
500m
A
,
V
CE
=1
V
Tr
a
n
sition
F
r
e
que
n
c
y
f
T
100
M
H
z
I
C
=
100m
A
,
V
CE
=5
V
,
f=1
00M
Hz
Outp
ut Ca
pa
cita
nce
C
obo
25
p
F
V
CB
=1
0V,

f
=
1M
Hz
*
Mea
sure
d
u
n
de
r pulsed conditions. Pu
ls
e width=3
0
0
µ
s. Duty
cy
cle
≤
2%
F
or t
ypical
ch
a
r
act
e
r
istics

g
r
aphs se
e F
MMT44
9 da
tashe
e
t
.
BC
X68
C
C
B
E
SOT89
3 -
3
6