BCX68-10
器件描述:NPN Silicon AF Transistors
文件大小:45.92KB,共4页
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器件资料摘要:
BCX68
Jun-29-20011
NPN Silicon AF Transistors
G01 For general AF applications
G01 High collector current
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Complementary type: BCX69 (PNP)
2
1
3
VPS05162
2
Type Marking Pin Configuration Package
BCX68
BCX68-10
BCX68-16
BCX68-25
CA
CB
CC
CD
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
SOT89
SOT89
SOT89
SOT89
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO
20 V
Collector-base voltage
V
CBO
25
Emitter-base voltage
V
EBO
5
DC collector current
I
C
1 A
Peak collector current
I
CM
2
Base current
I
B
100 mA
Peak base current
I
BM
200
Total power dissipation, T
S
= 130 °C P
tot
1 W
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0120 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance