MAXIMUM RATINGS (T
A
=25°C)
BCX54 BCX55 BCX56 UNITS
Collector-Base Voltage V
CBO
45 60 100 V
Collector-Emitter Voltage V
CEO
45 60 80 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
1.0 A
Peak Collector Current I
CM
1.5 A
Base Current I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation P
D
1.2 W
Operating and Storage
Junction Temperature T
J
,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
104 °C/W
ELECTRICAL CHARACTERISTICS: (T
A
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
V
CB
=30V 100 nA
I
CBO
V
CB
=30V, T
A
=125°C 10 µA
I
EBO
V
EB
=5.0V 100 nA
BV
CBO
I
C
=100µA (BCX54) 45 V
BV
CBO
I
C
=100µA (BCX55) 60 V
BV
CBO
I
C
=100µA (BCX56) 100 V
BV
CEO
I
C
=10mA (BCX54) 45 V
BV
CEO
I
C
=10mA (BCX55) 60 V
BV
CEO
I
C
=10mA (BCX56) 80 V
V
CE(SAT)
I
C
=500mA, I
B
=50mA 0.5 V
V
BE(ON)
V
CE
=2.0V, I
B
=500mA 1.0 V
h
FE
V
CE
=2.0V, I
C
=5.0mA 63
h
FE
V
CE
=2.0V, I
C
=150mA 63 250
h
FE
V
CE
=2.0V, I
C
=150mA
(BCX54-10, BCX55-10, BCX56-10) 63 160
h
FE
V
CE
=2.0V, I
C
=150mA
(BCX54-16, BCX55-16, BCX56-16) 100 250
h
FE
V
CE
=2.0V, I
C
=500mA 40
f
T
V
CE
=5.0V, I
C
=10mA, f=100MHz 130 MHz
BCX54
BCX55
BCX56
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R1 ( 18-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX54,
BCX55, and BCX56 types are NPN Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.