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器件描述：SURFACE MOUNT PNP SILICON TRANSISTOR
器件厂商：CENTRAL [Central Semiconductor Corp]
厂商主页：http://www.centralsemi.com/
文件大小：103.82KB
文件页数：2
PDF阅读：BCX51.pdf (点击阅读器件资料)
摘要：
MAXIMUM RATINGS (T
A
=25°C)
BCX51 BCX52 BCX53 UNITS
Collector-Base Voltage V
CBO
45 60 100 V
Collector-Emitter Voltage V
CEO
45 60 80 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
1.0 A
Peak Collector Current I
CM
1.5 A
Base Current I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation P
D
1.2 W
Operating and Storage
Junction Temperature T
J
,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
104 °C/W
ELECTRICAL CHARACTERISTICS: (T
A
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
V
CB
=30V 100 nA
I
CBO
V
CB
=30V, T
A
=125°C 10 ?A
I
EBO
V
EB
=5.0V 100 nA
BV
CBO
I
C
=100?A (BCX51) 45 V
BV
CBO
I
C
=100?A (BCX52) 60 V
BV
CBO
I
C
=100?A (BCX53) 100 V
BV
CEO
I
C
=10mA (BCX51) 45 V
BV
CEO
I
C
=10mA (BCX52) 60 V
BV
CEO
I
C
=10mA (BCX53) 80 V
V
CE(SAT)
I
C
=500mA, I
B
=50mA 0.5 V
V
BE(ON)
V
CE
=2.0V, I
B
=500mA 1.0 V
h
FE
V
CE
=2.0V, I
C
=5.0mA 63
h
FE
V
CE
=2.0V, I
C
=150mA 63 250
h
FE
V
CE
=2.0V, I
C
=150mA
(BCX51-10, BCX52-10, BCX53-10) 63 160
h
FE
V
CE
=2.0V, I
C
=150mA
(BCX51-16, BCX52-16, BCX53-16) 100 250
h
FE
V
CE
=2.0V, I
C
=500mA 40
f
T
V
CE
=5.0V, I
C
=10mA, f=100MHz 50 MHz
BCX51
BCX52
BCX53
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R1 ( 18-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX51,
BCX52, and BCX53 types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
相关器件：BCX53 BCX52
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