BCX41, BSS64
1 Aug-20-2001
NPN Silicon AF and Switching Transistors
G01 For general AF applications
G01 High breakdown voltage
G01 Low collector-emitter saturation voltage
G01 Complementary types: BCX42, BSS63 (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BCX41
BSS64
EKs
AMs
1 = B
1 = B
2 = E
2 = E
3 = C
3 = C
SOT23
SOT23
Maximum Ratings
Parameter Symbol
BSS64 BCX41
Unit
Collector-emitter voltage
V
CEO
80 125 V
Collector-base voltage
V
CBO
120 125
Emitter-base voltage
V
EBO
5 5
DC collector current
I
C
800 mA
Peak collector current
I
CM
1 A
Base current mA100
I
B
Peak base current
I
BM
200
Total power dissipation, T
S
= 79 °C P
tot
330 mW
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01215 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance