Semiconductor Group 1
BCX 41
BSS 64
NPN Silicon AF and Switching Transistor BCX 41
BSS 64
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BCX 41
BSS 64
Q62702-C1659
Q62702-S535
EKs
AMs
SOT-23B E C
1 2 3
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 80 V
Collector-base voltage VCB0 120
Emitter-base voltage VEB0 5
Collector current IC 800 mA
Peak collector current ICM 1A
Base current IB 100 mA
Peak base current IBM 200
Total power dissipation, TS =79˚C Ptot 330 mW
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 285 K/W
125
125
5
BSS 64 BCX 41
Junction - soldering point Rth JS ≤ 215
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
a71 High breakdown voltage
a71 Low collector-emitter saturation voltage
a71 Complementary types: BCX 42, BSS 63 (PNP)
5.91