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BCX19
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：NPN Medium Power Transistor 器件厂商：FAIRCHILD [Fairchild Semiconductor] 厂商主页：http://www.fairchildsemi.com/ 文件大小：44KB 文件页数：3 PDF阅读：BCX19.pdf (点击阅读器件资料) 摘要： ?2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 BCX19 Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted Thermal Characteristics T A =25°C unless otherwise noted Symbol Parameter Value Units V CEO Collector-Emitter Voltage 45 V V CBO Collector-Base Voltage 50 V V EBO Emitter-Base Voltage 5.0 V I C Collector current - Continuous 500 mW T J , T stg Junction and Storage Temperature -55 ~ +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V (BR)CEO Collector-Emitter Breakdown Voltage I C = 10mA, I B = 0 45 V V (BR)CES Collector-Emitter Breakdown Voltage I C = 10?A, I C = 0 50 V I CBO Collector Cutoff Current V CB = 20V, I E = 0 V CB = 20V, I E = 0, T A = 150°C 100 5.0 nA ?A I EBO Emitter Cutoff Current V EB = 5.0V, I C = 0 10 ?A On Characteristics h FE DC Current Gain I C = 100mA, V CE = 1.0V I C = 300mA, V CE = 1.0V I C = 500mA, V CE = 1.0V 100 70 40 600 V CE(sat) Collector-Emitter Saturation Voltage I C = 500mA, I B = 50mA 0.62 V V BE(on) Base-Emitter On Voltage I C = 500mA, V CE = 1.0V 1.2 V Symbol Parameter Max. Units P D Total Device Dissipation Derate above 25°C 300 2.4 mW mW/°C R θJA Thermal Resistance, Junction to Ambient 417 °C/W BCX19 NPN Medium Power Transistor ? This device is designed for general purpose amplifiers. ? Sourced from process 38. SOT-23 1. Base 2. Emitter 3. Collector 1 2 3 Mark: U1 相关器件：

BCX19

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：NPN Medium Power Transistor
器件厂商：FAIRCHILD [Fairchild Semiconductor]
厂商主页：http://www.fairchildsemi.com/
文件大小：44KB
文件页数：3
PDF阅读：BCX19.pdf (点击阅读器件资料)

摘要：
?2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BCX19
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
Thermal Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 45 V
V
CBO
Collector-Base Voltage 50 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector current - Continuous 500 mW
T
J
, T
stg
Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
B
= 0 45 V
V
(BR)CES
Collector-Emitter Breakdown Voltage I
C
= 10?A, I
C
= 0 50 V
I
CBO
Collector Cutoff Current V
CB
= 20V, I
E
= 0
V
CB
= 20V, I
E
= 0, T
A
= 150°C
100
5.0
nA
?A
I
EBO
Emitter Cutoff Current V
EB
= 5.0V, I
C
= 0 10 ?A
On Characteristics
h
FE
DC Current Gain I
C
= 100mA, V
CE
= 1.0V
I
C
= 300mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 1.0V
100
70
40
600
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 500mA, I
B
= 50mA 0.62 V
V
BE(on)
Base-Emitter On Voltage I
C
= 500mA, V
CE
= 1.0V 1.2 V
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
300
2.4
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 417 °C/W
BCX19
NPN Medium Power Transistor
? This device is designed for general purpose amplifiers.
? Sourced from process 38.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: U1

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