©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BCX19
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
Thermal Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 45 V
V
CBO
Collector-Base Voltage 50 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector current - Continuous 500 mW
T
J
, T
stg
Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
B
= 0 45 V
V
(BR)CES
Collector-Emitter Breakdown Voltage I
C
= 10µA, I
C
= 0 50 V
I
CBO
Collector Cutoff Current V
CB
= 20V, I
E
= 0
V
CB
= 20V, I
E
= 0, T
A
= 150°C
100
5.0
nA
µA
I
EBO
Emitter Cutoff Current V
EB
= 5.0V, I
C
= 0 10 µA
On Characteristics
h
FE
DC Current Gain I
C
= 100mA, V
CE
= 1.0V
I
C
= 300mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 1.0V
100
70
40
600
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 500mA, I
B
= 50mA 0.62 V
V
BE(on)
Base-Emitter On Voltage I
C
= 500mA, V
CE
= 1.0V 1.2 V
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
300
2.4
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 417 °C/W
BCX19
NPN Medium Power Transistor
• This device is designed for general purpose amplifiers.
• Sourced from process 38.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: U1