Semiconductor Group 1
NPN Silicon AF Switching Transistor BCX 12
5.91
Maximum Ratings
Type Ordering CodeMarking Package
1)
Pin Configuration
BCX 12 Q62702-C25BCX 12 TO-92C B E
1 2 3
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 125 V
Collector-base voltage VCB0 125
Emitter-base voltage VEB0 5
Collector current IC 800 mA
Peak collector current ICM 1A
Base current IB 100 mA
Peak base current IBM 200
Total power dissipation, TC =66˚C Ptot 625 mW
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Junction - case
2)
Rth JC ≤ 135
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
a71 For general AF applications
a71 High breakdown voltage
a71 Low collector-emitter saturation voltage
a71 Complementary type: BCX 13 (PNP)
1
2
3