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BCWALT1
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：General Purpose Transistors(NPN Silicon) 器件厂商：LRC [Leshan Radio Company] 厂商主页：http://www.lrc-china.com/ 文件大小：315.83KB 文件页数：6 PDF阅读：BCWALT1.pdf (点击阅读器件资料) 摘要： LESHAN RADIO COMPANY, LTD. M9–1/6 1 3 2 General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 32 Vdc Emitter–Base Voltage V EBO 5.0 Vdc Collector Current — Continuous I C 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) P D 225 mW T A = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C DEVICE MARKING BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 2.0mAdc, I E = 0 ) V (BR)CEO 32 — Vdc Emitter–Base Breakdown Voltage (I E = 1.0 ?Adc, I C = 0) V (BR)EBO 5.0 — Vdc Collector Cutoff Current I CES (V CE = 32 Vdc, ) — 20 nAdc (V CE = 32 Vdc, T A = 150°C) — 20 ?Adc Emitter Cutoff Current (I EB = 4.0 Vdc, I C = 0) I EBO — 20 nAdc 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. BCW60ALT1 BCW60BLT1 BCW60DLT1 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) 2 EMITTER 3 COLLECTOR 1 BASE 相关器件：BCWDLT1 BCWBLT1

BCWALT1

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：General Purpose Transistors(NPN Silicon)
器件厂商：LRC [Leshan Radio Company]
厂商主页：http://www.lrc-china.com/
文件大小：315.83KB
文件页数：6
PDF阅读：BCWALT1.pdf (点击阅读器件资料)

摘要：
LESHAN RADIO COMPANY, LTD.
M9–1/6
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
32 Vdc
Collector–Base Voltage V
CBO
32 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 2.0mAdc, I
E
= 0 )
V
(BR)CEO
32 — Vdc
Emitter–Base Breakdown Voltage
(I
E
= 1.0 ?Adc, I
C
= 0)
V
(BR)EBO
5.0 — Vdc
Collector Cutoff Current I
CES
(V
CE
= 32 Vdc, ) — 20 nAdc
(V
CE
= 32 Vdc, T
A
= 150°C) — 20 ?Adc
Emitter Cutoff Current
(I
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
— 20 nAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW60ALT1
BCW60BLT1
BCW60DLT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE

相关器件：BCWDLT1 BCWBLT1

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