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器件描述：General Purpose Transistors(NPN Silicon)
器件厂商：LRC [Leshan Radio Company]
厂商主页：http://www.lrc-china.com/
文件大小：317.62KB
文件页数：6
PDF阅读：BCW73LT1.pdf (点击阅读器件资料)
摘要：
LESHAN RADIO COMPANY, LTD.
M14–1/6
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
45 Vdc
Collector–Base Voltage V
CBO
50 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BCW72LT1 = K2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
V
(BR)CEO
45 — — Vdc
(I
C
= 2.0mAdc, V
EB
= 0 )
Collector–Emitter Breakdown Voltage
V
(BR)CES
45 — — Vdc
(I
C
= 2.0 mAdc, V
EB
= 0 )
Collector–Base Breakdown Voltage
V
(BR)CBO
50 — — Vdc
(I
C
= 10 ?Adc, I
E
= 0 )
Emitter–Base Breakdown Voltage
(I
E
= 10 ?Adc, I
C
= 0)
V
(BR)EBO
5.0 — — Vdc
Collector Cutoff Current I
CBO
(V
CB
= 20 Vdc, I
E
= 0)
— — 100 nAdc
(V
CB
= 20 Vdc, I
E
= 0, T
A
=100°C )
——10?Adc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW72LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
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