BCW71 NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T A =25 °C )
• Refer to KST2222 for graphs
ELECTRICAL CHARACTERISTICS (T A =25 °C )
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
V CBO
V CEO
V EBO
I C
P C
T STG
50
45
5
100
350
150
V
V
V
mA
mW
°C
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figures
BV CBO
BV CEO
BV CES
BV EBO
I CBO
h FE
V CE (sat)
V BE (sat)
V BE (on)
f T
C OB
NF
I C =10 µA , I E =0
I C =2mA, I B =0
I C =2mA, V EB =0
I E =10 µA , I C =0
V CB =20V, I E =0
V CE =5V, I C =2mA
I C =10mA, I B =0.5mA
I C =50mA, I B =2.5mA
I C =50mA, I B =2.5mA
I C =2mA, V CE =5V
V CE =5V, I C =10mA
f=35MHz
V CB =10V, I E =0
f=1MHz
V CE =5V, I C =2.0mA
R G =2 K Ω, f=1KHz
50
45
45
5
110
0.6
0.21
0.85
300
100
220
0.25
0.75
4
10
V
V
V
V
nA
V
V
V
V
MHz
pF
dB
SOT-23
1. Base 2. Emitter 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B