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BCW70LT1
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：General Purpose Transistors(PNP Silicon) 器件厂商：ONSEMI [ON Semiconductor] 厂商主页：http://www.onsemi.com 文件大小：309.71KB 文件页数：8 PDF阅读：BCW70LT1.pdf (点击阅读器件资料) 摘要： ? Semiconductor Components Industries, LLC, 1999 December, 1999 – Rev. 0 1 Publication Order Number: BCW70LT1/D C0066C0067C0087C0055C0048C0076C0084C0049 C0071C0101C0110C0101C0114C0097C0108 C0080C0117C0114C0112C0111C0115C0101 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –45 Vdc Emitter–Base Voltage V EBO –5.0 Vdc Collector Current — Continuous I C –100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Device Package Shipping ORDERING INFORMATION BCW70LT1 SOT–23 http://onsemi.com SOT–23 (TO–236AB) CASE 318 STYLE 6 3000 Units/Reel DEVICE MARKING H2x x = Monthly Date Code 1 2 3 COLLECTOR 3 1 BASE 2 EMITTER Preferred devices are recommended choices for future use and best overall value. 相关器件：

BCW70LT1

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：General Purpose Transistors(PNP Silicon)
器件厂商：ONSEMI [ON Semiconductor]
厂商主页：http://www.onsemi.com
文件大小：309.71KB
文件页数：8
PDF阅读：BCW70LT1.pdf (点击阅读器件资料)

摘要：
? Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 0
1 Publication Order Number:
BCW70LT1/D
C0066C0067C0087C0055C0048C0076C0084C0049
C0071C0101C0110C0101C0114C0097C0108 C0080C0117C0114C0112C0111C0115C0101
C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–45 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
θJA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to
+150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Device Package Shipping
ORDERING INFORMATION
BCW70LT1 SOT–23
http://onsemi.com
SOT–23 (TO–236AB)
CASE 318
STYLE 6
3000 Units/Reel
DEVICE MARKING
H2x
x = Monthly Date Code
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
Preferred devices are recommended choices for future use
and best overall value.

相关器件：

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