BCW70LT1
器件描述：General Purpose Transistors(PNP Silicon)
器件厂商：ONSEMI [ON Semiconductor]
文件大小：309.71KB，共8页
Sponsor by e络盟器件资料摘要：
Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 0
1 Publication Order Number:
BCW70LT1/D
C0066C0067C0087C0055C0048C0076C0084C0049
C0071C0101C0110C0101C0114C0097C0108 C0080C0117C0114C0112C0111C0115C0101
C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–45 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
θJA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to
+150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Device Package Shipping
ORDERING INFORMATION
BCW70LT1 SOT–23
http://onsemi.com
SOT–23 (TO–236AB)
CASE 318
STYLE 6
3000 Units/Reel
DEVICE MARKING
H2x
x = Monthly Date Code
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
Preferred devices are recommended choices for future use
and best overall value.
December, 1999 – Rev. 0
1 Publication Order Number:
BCW70LT1/D
C0066C0067C0087C0055C0048C0076C0084C0049
C0071C0101C0110C0101C0114C0097C0108 C0080C0117C0114C0112C0111C0115C0101
C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–45 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
θJA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to
+150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Device Package Shipping
ORDERING INFORMATION
BCW70LT1 SOT–23
http://onsemi.com
SOT–23 (TO–236AB)
CASE 318
STYLE 6
3000 Units/Reel
DEVICE MARKING
H2x
x = Monthly Date Code
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
Preferred devices are recommended choices for future use
and best overall value.