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器件描述：Surface mount Si-Epitaxial PlanarTransistors
器件厂商：DIOTEC [Diotec Semiconductor]
厂商主页：http://www.diotec.com/
文件大小：180.32KB
文件页数：2
PDF阅读：BCW69.pdf (点击阅读器件资料)
摘要：
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (L?tpad) an jedem Anschlu?
2
) Tested with pulses t
p
= 300 g58s, duty cycle g35 2% – Gemessen mit Impulsen t
p
= 300 g58s, Schaltverh?ltnis g35 2%
46 01.11.2003
2.
5
ma
x
1.
3
±0
.
1
1.1
2.9
±0.1
0.4
1 2
3
Type
Code
1.9
BCW 69, BCW 70 General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberfl?chenmontage
PNP
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgeh?use (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Geh?usematerial UL94V-0 klassifiziert
Dimensions / Ma?e in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BCW 69, BCW 70
Collector-Emitter-voltage B open - V
CE0
45 V
Collector-Base-voltage E open - V
CB0
50 V
Emitter-Base-voltage C open - V
EB0
5 V
Power dissipation – Verlustleistung P
tot
250 mW
1
)
Collector current – Kollektorstrom (DC) - I
C
100 mA
Peak Collector current – Kollektor-Spitzenstrom - I
CM
200 mA
Peak Base current – Basis-Spitzenstrom - I
BM
200 mA
Junction temperature – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150g47C
Characteristics (T
j
= 25g47C) Kennwerte (T
j
= 25g47C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, - V
CB
= 20 V - I
CB0
– – 100 nA
I
E
= 0, - V
CB
= 20 V, T
j
= 100g47C- I
CB0
– – 10 g58A
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, - V
EB
= 5 V - I
EB0
– – 100 nA
Collector saturation volt. – Kollektor-S?ttigungsspg.
2
)
- I
C
= 10 mA, - I
B
= 0.5 mA - V
CEsat
– 80 mV 300 mV
- I
C
= 50 mA, - I
B
= 2.5 mA - V
CEsat
– 150 mV –
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