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BCW69LT1
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：General Purpose Transistors(PNP Silicon) 器件厂商：LRC [Leshan Radio Company] 厂商主页：http://www.lrc-china.com/ 文件大小：254.03KB 文件页数：6 PDF阅读：BCW69LT1.pdf (点击阅读器件资料) 摘要： LESHAN RADIO COMPANY, LTD. M13–1/6 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO – 45 Vdc Emitter–Base Voltage V EBO – 5.0 Vdc Collector Current — Continuous I C – 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) P D 225 mW T A = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2, ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –2.0 mAdc, I B = 0 ) V (BR)CEO – 45 — Vdc Collector–Emitter Breakdown Voltage (I C = –100 ?Adc, V EB = 0 ) V (BR)CES – 50 — Vdc Emitter–Base Breakdown Voltage (I E = –10 ?Adc, I C = 0) V (BR)EBO – 5.0 — Vdc Collector Cutoff Current I CEO (V CE = –20 Vdc, I E = 0 ) — – 100 nAdc (V CE = –20 Vdc, I E = 0 , T A = 100°C) — – 10 ?Adc 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 3 2 General Purpose Transistors PNP Silicon BCW69LT1 BCW70LT1 2 EMITTER 3 COLLECTOR 1 BASE CASE 318–08, STYLE 6 SOT–23 (TO–236AB) 相关器件：BCW70LT1

BCW69LT1

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：General Purpose Transistors(PNP Silicon)
器件厂商：LRC [Leshan Radio Company]
厂商主页：http://www.lrc-china.com/
文件大小：254.03KB
文件页数：6
PDF阅读：BCW69LT1.pdf (点击阅读器件资料)

摘要：
LESHAN RADIO COMPANY, LTD.
M13–1/6
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
– 45 Vdc
Emitter–Base Voltage V
EBO
– 5.0 Vdc
Collector Current — Continuous I
C
– 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2,
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= –2.0 mAdc, I
B
= 0 ) V
(BR)CEO
– 45 — Vdc
Collector–Emitter Breakdown Voltage (I
C
= –100 ?Adc, V
EB
= 0 ) V
(BR)CES
– 50 — Vdc
Emitter–Base Breakdown Voltage (I
E
= –10 ?Adc, I
C
= 0) V
(BR)EBO
– 5.0 — Vdc
Collector Cutoff Current I
CEO
(V
CE
= –20 Vdc, I
E
= 0 ) — – 100 nAdc
(V
CE
= –20 Vdc, I
E
= 0 , T
A
= 100°C) — – 10 ?Adc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
3
2
General Purpose Transistors
PNP Silicon
BCW69LT1
BCW70LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)

相关器件：BCW70LT1

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