LESHAN RADIO COMPANY, LTD.
M12–1/2
1
3
2
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
– 45 Vdc
Collector–Base Voltage V
CBO
– 60 Vdc
Emitter–Base Voltage V
EBO
– 5.0 Vdc
Collector Current — Continuous I
C
– 800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BCW68GLT1 = DH
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= –10 mAdc, I
B
= 0 ) V
(BR)CEO
– 45 — — Vdc
Collector–Emitter Breakdown Voltage (I
C
= –10 µAdc, V
EB
= 0 ) V
(BR)CES
– 60 — — Vdc
Emitter–Base Breakdown Voltage (I
E
= –10 µAdc, I
C
= 0) V
(BR)EBO
– 5.0 — — Vdc
Collector Cutoff Current I
CES
(V
CE
= –45 Vdc, I
E
= 0 ) — — – 20 nAdc
(V
CE
= –45 Vdc, I
B
= 0 , T
A
= 150°C) — — – 10 µAdc
Emitter Cutoff Current (V
EB
= – 4.0 Vdc, I
C
= 0) I
EBO
— — – 20 nAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW68GLT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)