BCW66H
器件描述:NPN Small Signal Transistor 330mW
文件大小:90.4KB,共2页
Sponsor by e络盟
器件资料摘要:
Features
l Ideally Suited for Automatic Insertion
l 150
o
C Junction Temperature
l Low Current, Low Voltage
l Epitaxial Planar Die Construction
Mechanical Data
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Marking: EH
l Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage V
CEO
45 V
Collector-Base Voltage V
CBO
75 V
Emitter-Base Voltage V
EBO
5 V
Collector Current(DC) I
C
800 mA
Peak Collector Current I
CM
1000 mA
Base Current(DC) I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation@T
s
=79
o
C P
d
330 mW
Thermal Resistance, Junction to
Ambient Air
285
(1) o
C/W
Thermal Resistance, Junction to
Soldering Point
215
o
C/W
Operating & Storage Temperature T
j
, T
STG
-55~150
o
C
Notes:
(1) Mounted on FR-4 printed-circuit board
BCW66H
NPN Small
Signal Transistor
330mW
www.mccsemi.com
RθJA
RθJS
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
A
B
C
D
EF
G H J
SOT-23
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21201 Itasca Street Chatsworth
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MCC