BCW67, BCW68
1 Jul-10-2001
PNP Silicon AF Transistors
G01 For general AF applications
G01 High current gain
G01 Low collector-emitter saturation voltage
G01G02Complementary types: BCW65, BCW66 (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
DAs
DBs
DCs
DFs
DGs
DHs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol
BCW67 BCW68
Unit
Collector-emitter voltage
V
CEO
32 45 V
Collector-base voltage
V
CBO
45 60
Emitter-base voltage
V
EBO
5 5
DC collector current
I
C
800 mA
Peak collector current
I
CM
1 A
Base current mA100
I
B
Peak base current
I
BM
200
Total power dissipation, T
S
= 79 °C P
tot
330 mW
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01215 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance