BCW66
器件描述：SMALL SIGNAL NPN TRANSISTORS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：39.66KB，共4页
Sponsor by e络盟器件资料摘要：
BCW66
SMALL SIGNAL NPN TRANSISTORS
n SILICON EPITAXIALPLANAR NPN
TRANSISTORS
n MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
n MEDIUM CURRENT AF AMPLIFICATION
AND SWITCHING
n PNP COMPLEMENT IS BCW68
INTERNAL SCHEMATIC DIAGRAM
October 1997
1
2
3
SOT-23
Type Marking
BCW66F EF
BCW66G EG
BCW66H EH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE =0) 75 V
V
CEO
Collector-Emitter Voltage (I
B
=0) 45 V
V
EBO
Emitter-Base Voltage (I
C
=0) 5 V
IC Collector Current 0.8 A
ICM Collector Peak Current 1 A
I
B
Base Current 0.1 A
Ptot Total Dissipation at Tc =25
o
C 360 mW
T
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1/4
SMALL SIGNAL NPN TRANSISTORS
n SILICON EPITAXIALPLANAR NPN
TRANSISTORS
n MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
n MEDIUM CURRENT AF AMPLIFICATION
AND SWITCHING
n PNP COMPLEMENT IS BCW68
INTERNAL SCHEMATIC DIAGRAM
October 1997
1
2
3
SOT-23
Type Marking
BCW66F EF
BCW66G EG
BCW66H EH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE =0) 75 V
V
CEO
Collector-Emitter Voltage (I
B
=0) 45 V
V
EBO
Emitter-Base Voltage (I
C
=0) 5 V
IC Collector Current 0.8 A
ICM Collector Peak Current 1 A
I
B
Base Current 0.1 A
Ptot Total Dissipation at Tc =25
o
C 360 mW
T
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1/4