LESHAN RADIO COMPANY, LTD.
M11–1/2
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
32 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BCW65ALT1 = EA
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
V
(BR)CEO
32 — — Vdc
(I
C
= 10mAdc, I
B
= 0 )
Collector–Emitter Breakdown Voltage
V
(BR)CES
60 — — Vdc
(I
C
= 10 µAdc, V
EB
= 0 )
Emitter–Base Breakdown Voltage
(I
E
= 10 µAdc, I
C
= 0)
V
(BR)EBO
5.0 — — Vdc
Collector Cutoff Current I
CES
(V
CE
= 32 Vdc, I
E
= 0 ) — — 20 nAdc
(V
CE
= 32 Vdc, I
E
= 0 , T
A
= 150°C) — — 20 µAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
— — 20 nAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW65ALT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)