BCW61A/B/C/ D PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T A =25 °C )
• Refer to KS5086 for graphs
ELECTRICAL CHARACTERISTICS (T A =25 °C )
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
V CBO
V CEO
V EBO
I C
P C
T STG
-32
-32
-5.0
-100
350
-55 ~ 150
V
V
V
mA
mW
°C
Characteristic Symbol Test Conditions Min Max Unit
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
: BCW61B
: BCW61C
: BCW61D
: BCW61A
: BCW61B
: BCW61C
: BCW61D
: BCW61A
: BCW61B
: BCW61C
: BCW61D
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time
BV CEO
BV EBO
I CES
h FE
V CE (sat)
V BE (sat)
V BE (on)
C OB
NF
t ON
t OFF
I C = -2mA, I B =0
I E = -1 µA , I C =0
V CB = -32V, V BE =0
V CE = -5V, I C = -10 µA
V CE = -5V, I C = -2mA
V CE = -5V, I C = -50mA
I C = -50mA, I B = -1.25mA
I C = -10mA, I B = -0.25mA
I C = -50mA, I B = -1.25mA
I C = -10mA, I B = -0.25mA
V CE = -5V, I C = -2mA
V CB = -10V, I E =0
f=1MHz
I C = -0.2mA, V CE = -5V
R G =20 K Ω, f=1KHz
I C = -10mA, I B 1= -1mA
V BB = -3.6V, I B 2= -1mA
R1=R2=50 K Ω, R L =990 Ω
-32
-5
20
40
100
120
140
250
380
60
80
100
100
0.68
0.6
0.6
-20
220
310
460
630
-0.55
-0.25
1.05
0.85
0.75
6
6
150
800
V
V
nA
V
V
V
V
V
pF
dB
ns
ns
SOT-23
1. Base 2. Emitter 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B