BCW60A
器件描述：NPN Epitaxial Silicon Transistor
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：55.11KB，共4页
Sponsor by e络盟器件资料摘要：
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BCW
6
0
A
/B
/C/
D
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 32 V
V
CEO
Collector-Emitter Voltage 32 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 100 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
BCW60A/B/C/D
General Purpose Transistor
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
BCW
6
0
A
/B
/C/
D
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 32 V
V
CEO
Collector-Emitter Voltage 32 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 100 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
BCW60A/B/C/D
General Purpose Transistor
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3