 Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 2
1 Publication Order Number:
BCW33LT1/D
BCW33LT1
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V
CEO
32 Vdc
Collector- Base Voltage V
CBO
32 Vdc
Emitter- Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2), T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
- 55 to
+150
°C
1. FR- 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
V
(BR)CEO
32 — Vdc
Collector- Base Breakdown Voltage
(I
C
= 10 Adc, I
B
= 0)
V
(BR)CBO
32 — Vdc
Emitter- Base Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
5.0 — Vdc
Collector Cutoff Current
(V
CB
= 32 Vdc, I
E
= 0)
(V
CB
= 32 Vdc, I
E
= 0, T
A
= 100°C)
I
CBO
—
—
100
10
nAdc
µAdc
Device Package Shipping
ORDERING INFORMATION
BW33LT1 SOT-23 3000 / Tape & Reel
PLASTIC
SOT-23 (TO-236AB)
CASE 318
1
2
3
D3 M
MARKING DIAGRAM
D3 = Specific Device Code
M = Date Code
COLLECTOR
3
1
BASE
2
EMITTER
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