BCW31 NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25G26)
• Refer to KST5088 for graphs
ELECTRICAL CHARACTERISTICS (TA=25G26)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TSTG
30
20
5
100
350
150
V
V
V
mA
mW
G26
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Noise Figures
BVCBO
BVCEO
BVEBO
hFE
VCE (sat)
VBE (on)
COB
NF
IC=10G7D, IE=0
IC=2mA, IB=0
IE=10G7D, IC=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
VCE=5V, IC=2mA
VCB=10V, IE=0
f=1MHz
VCE=5V, IC=0.2mA
RG=2G8C, f=1KHz
30
20
5
110
0.55
220
0.25
0.7
4
10
V
V
V
V
V
pF
dB
SOT-23
1. Base 2. Emitter 3. Collector
©1999 Fairchild Semiconductor Corporation
Rev. B