BCW30
器件描述：SMALL SIGNAL PNP TRANSISTORS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：37.39KB，共4页
Sponsor by e络盟器件资料摘要：
BCW30
SMALL SIGNAL PNP TRANSISTORS
n SILICON EPITAXIALPLANAR PNP
TRANSISTORS
n MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
n LOW LEVEL AUDIO AMPLIFICATION AND
SWITCHING
INTERNAL SCHEMATIC DIAGRAM
October 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE =0) -32 V
V
CEO
Collector-Emitter Voltage (I
B
=0) -32 V
VCBO Collector-Base Voltage (IE =0) -32 V
V
EBO
Emitter-Base Voltage (I
C
=0) -5 V
I
C
Collector Current -0.1 A
ICM Collector Peak Current -0.2 A
P
tot
Total Dissipation at T
c
=25
o
C3mW
stg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1
2
3
SOT-23
Type Marking
BCW30 C2
1/4
SMALL SIGNAL PNP TRANSISTORS
n SILICON EPITAXIALPLANAR PNP
TRANSISTORS
n MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
n LOW LEVEL AUDIO AMPLIFICATION AND
SWITCHING
INTERNAL SCHEMATIC DIAGRAM
October 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE =0) -32 V
V
CEO
Collector-Emitter Voltage (I
B
=0) -32 V
VCBO Collector-Base Voltage (IE =0) -32 V
V
EBO
Emitter-Base Voltage (I
C
=0) -5 V
I
C
Collector Current -0.1 A
ICM Collector Peak Current -0.2 A
P
tot
Total Dissipation at T
c
=25
o
C3mW
stg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1
2
3
SOT-23
Type Marking
BCW30 C2
1/4