LESHAN RADIO COMPANY, LTD.
M7–1/6
1
3
2
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–32 Vdc
Collector–Base Voltage V
CBO
–32 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –2.0mAdc, I
E
= 0 )
V
(BR)CEO
–32 — Vdc
Collector–Emitter Breakdown Voltage
(I
C
= –100 µAdc, V
EB
= 0)
V
(BR)CES
–32 — Vdc
Collector–Emitter Breakdown Voltage
(I
C
= –10 µAdc, I
C
= 0)
V
(BR)CBO
–32 — Vdc
Emitter–Base Breakdown Voltage
(I
E
= –10 µAdc, I
C
= 0)
V
(BR)EBO
–5.0 — Vdc
Collector Cutoff Current I
CBO
(V
CB
= –32 Vdc, I
E
= 0 ) — –100 nAdc
(V
CB
= –32 Vdc, I
E
= 0, T
A
= 100°C) — –10 µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW29LT1
BCW30LT1
1
EMITTER
3
COLLECTOR
2
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)