Semiconductor Group 1
NPN Silicon Double Transistors BCV 61
5.91
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package
1)
Pin Configuration
BCV 61 A
BCV 61 B
BCV 61 C
Q62702-C2155
Q62702-C2156
Q62702-C2157
1Js
1Ks
1Ls
SOT-143
Parameter Symbol Values Unit
Collector-emitter voltage
(transistor T1)
VCE0 30 V
Collector-base voltage (open emitter)
(transistor T1)
VCB0 30
Junction temperature Tj 150 ˚C
Total power dissipation, TS ≤ 99 ˚C
2)
Ptot 300 mW
Storage temperature range Tstg – 65 … + 150
Collector current IC 100 mA
Emitter-base voltage VEBS 6
Collector peak current ICM 200
Base peak current (transistor T1) IBM 200
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 240 K/W
Junction - soldering point Rth JS ≤ 170
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
Preliminary Data
a71 To be used as a current mirror
a71 Good thermal coupling and VBE matching
a71 High current gain
a71 Low emitter-saturation voltage